Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Avalanche Energy Rating (Eas)":"25 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"22 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0510 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"55 A","Channel Type":"N-CHANNEL","FET ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.2 W","Avalanche Energy Rating (Eas)":"25 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"22 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0510 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"55 A","Channel Type":"N-CHANNEL","FET T...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.2 W","Avalanche Energy Rating (Eas)":"25 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"22 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0390 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"55 A","Channel Type":"N-CHANNEL","FE...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Supplier Device Package":"TO-252 (MP-3ZK)","Datasheets":"NP22N055xHE","Rds On (Max) @ Id, Vgs":"39 mOhm @ 11A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.2W","Standard Package":"2,500","PCN Assembly/Origin":"Wafer Fabrication S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.2 W","Avalanche Energy Rating (Eas)":"25 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"22 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0510 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"55 A","Channel Type":"N-CHANNEL","FE...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"-","Standard Package":"2,500","Supplier Device Package":"TO-252 (MP-3ZK)","Datasheets":"NP22N055xLE","Rds On (Max) @ Id, Vgs":"37 mOhm @ 11A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.2W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount","Drain t...

{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Rise Time":"6 ns","Typical Turn-Off Delay Time":"32 ns","Description":"Value","Maximum Continuous Drain Current":"22 A","Package":"3TO-252","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"9 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"37@10V mOhm","Manufacturer":"Renesas Electronics","Typical Fall Time":"5.4 ns"}...