Product Datasheet Search Results:
4 Pages, 71 KB, Original- SIGC10T60S
- Infineon Technologies
- TRANS IGBT CHIP N-CH 600V 20A SAWN ON FOIL
Product Details Search Results:
Infineon.com/SIGC100T60R3
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"MATTE TIN","Package Body Material":"UNSPECIFIED","Mfr Package Description":"9.73 X 10.23 MM, DIE-10","Terminal Form":"NO LEAD","Package Style":"UNCASED CHIP","Collector Current-Max (IC)":"200 A","Collector-emitter Voltage-Max":"600 V","Transistor Application":"POWER CONTROL","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Conf...
1278 Bytes - 00:26:10, 15 January 2026
Infineon.com/SIGC100T60R3E
873 Bytes - 00:26:10, 15 January 2026
Infineon.com/SIGC101T170R3
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"MATTE TIN","Number of Elements":"1","Mfr Package Description":"10.03 X 10.03 MM, DIE","Terminal Form":"NO LEAD","Package Style":"UNCASED CHIP","Collector-emitter Voltage-Max":"1700 V","Transistor Application":"POWER CONTROL","Collector Current-Max (IC)":"75 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"SQUARE","Configuration":"SINGLE","Package Body Material":"...
1253 Bytes - 00:26:10, 15 January 2026
Infineon.com/SIGC104T170R2C
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"MATTE TIN","Package Body Material":"UNSPECIFIED","Mfr Package Description":"10.12 X 10.18 MM, DIE-10","Terminal Form":"NO LEAD","Package Style":"UNCASED CHIP","Collector Current-Max (IC)":"50 A","Collector-emitter Voltage-Max":"1700 V","Transistor Application":"POWER CONTROL","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Con...
1295 Bytes - 00:26:10, 15 January 2026
Infineon.com/SIGC109T120R3
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"MATTE TIN","Number of Elements":"1","Mfr Package Description":"10.47 X 10.44 MM, DIE","Terminal Form":"NO LEAD","Package Style":"UNCASED CHIP","Turn-off Time-Nom (toff)":"610 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Collector Current-Max (IC)":"100 A","Turn-on Time-Nom (ton)":"330 ns","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Pac...
1330 Bytes - 00:26:10, 15 January 2026
Infineon.com/SIGC109T120R3L
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"MATTE TIN","Number of Elements":"1","Mfr Package Description":"10.47 X 10.44 MM, DIE","Terminal Form":"NO LEAD","Package Style":"UNCASED CHIP","Collector-emitter Voltage-Max":"1200 V","Transistor Application":"POWER CONTROL","Collector Current-Max (IC)":"100 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Package Body Mater...
1265 Bytes - 00:26:10, 15 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SGT10T60SD1F.pdf | 0.60 | 1 | Request | |
| SGT10T60SD1STR.pdf | 0.60 | 1 | Request | |
| SGT10T60SD1S.pdf | 0.60 | 1 | Request | |
| SGT10T60SD1STR.pdf | 0.60 | 1 | Request | |
| SGT10T60SD1F.pdf | 0.60 | 1 | Request | |
| SGT10T60SD1S.pdf | 0.60 | 1 | Request |
