Product Datasheet Search Results:
8 Pages, 1018 KB, Original- RN1104MFV
- Toshiba America Electronic Components, Inc.
- 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
8 Pages, 849 KB, Original- RN1104MFV,L3F
- Toshiba
- Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R
8 Pages, 849 KB, Original- RN1104MFV,L3F(CT
- Toshiba
- Trans Digital BJT NPN 50V 100mA 150mW 3-Pin VESM T/R
9 Pages, 1016 KB, Original- RN1104MFV(TPL3)
- Toshiba
- Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 4.7K x 4.7Kohms
Product Details Search Results:
Toshiba.co.jp/RN1104MFV
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ULTRA SMALL, VESM, 2-1L1A, 3 PIN","Terminal Form":"FLAT","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"80","Collector Current-Max (IC)":"0.1000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configu...
1387 Bytes - 17:48:53, 13 January 2026
Toshiba.co.jp/RN1104MFV,L3F
{"Continuous Collector Current":"100 mA","Emitter- Base Voltage VEBO":"10 V","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"NPN","DC Collector/Base Gain hfe Min":"80","Pd - Power Dissipation":"150 mW","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Minimum Operating Temperature":"- 55 C","Package / Case":"SOT-723-3","Typical Resistor Ratio":"0.8","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Brand":"Toshiba","RoH...
1668 Bytes - 17:48:53, 13 January 2026
Toshiba.co.jp/RN1104MFV,L3F(CT
1087 Bytes - 17:48:53, 13 January 2026
Toshiba.co.jp/RN1104MFV(TL3,T)
{"Factory Pack Quantity":"8000","Product Category":"Bipolar Transistors - Pre-Biased","Brand":"Toshiba","Packaging":"Reel","RoHS":"Details","Manufacturer":"Toshiba"}...
1172 Bytes - 17:48:53, 13 January 2026
Toshiba.co.jp/RN1104MFV(TPL3)
{"Continuous Collector Current":"100 mA","Factory Pack Quantity":"8000","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"NPN","DC Collector/Base Gain hfe Min":"80","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Peak DC Collector Current":"100 mA","Pd - Power Dissipation":"150 mW","Typical Resistor Ratio":"1","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Brand":"Toshiba","RoHS":"Details","Manufacturer":"Toshiba"}...
1376 Bytes - 17:48:53, 13 January 2026
Toshiba.semicon-storage.com/RN1104MFV,L3F
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Product Photos":"VESM","Package / Case":"SOT-723","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 10mA, 5V","Frequency - Transition":"-","Voltage - Collector Emitter Breakdown (Max)":"50V","Datasheets":"RN1101MFV - RN1106MFV -","Resistor - Emitter Base (R2) (Ohms)":"47k","Standard Package":"8,000","Transistor Type":"NPN - Pre-Biased","Family":"Transistors (BJT) - Single, Pre-Biased","Vce Saturation (Max) @ Ib, Ic":"300mV @...
1989 Bytes - 17:48:53, 13 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| RN1104MFV.pdf | 0.99 | 1 | Request |
