Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Transistor Polarity":"NPN","Terminal Form":"FLAT","Collector Current-Max (IC)":"0.1000 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN RESISTOR","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Surface Mount":"Yes","Case Connection":"...

{"Continuous Collector Current":"100 mA","Factory Pack Quantity":"8000","Product Category":"Bipolar Transistors - Pre-Biased","Transistor Polarity":"NPN","DC Collector/Base Gain hfe Min":"30","Mounting Style":"SMD/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Packaging":"Reel","Peak DC Collector Current":"100 mA","Pd - Power Dissipation":"150 mW","Typical Resistor Ratio":"1","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Brand":"Toshiba","RoHS":"Details","Manufacturer":"Toshiba"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Mounting Type":"Surface Mount","Transistor Type":"NPN - Pre-Biased","Product Photos":"VESM","Family":"Transistors (BJT) - Single, Pre-Biased","Resistor - Base (R1) (Ohms)":"4.7k","Series":"-","Vce Saturation (Max) @ Ib, Ic":"300mV @ 500\u00b5A, 5mA","Voltage - Collector Emitter Breakdown (Max)":"50V","Supplier Device Package":"VESM","Packaging":"Tape & Reel (TR)","Resistor - Emitter Base (R2) (Ohms)":"4.7k","Datasheets":...