Product Datasheet Search Results:
1 Pages, 231 KB, Original- OMD5000
- Epson Electronics America
- OMD5000
4 Pages, 39 KB, Original- OMD500
- International Rectifier
- 11 A, 500 V, 0.43 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 39 KB, Original- OMD500PBF
- International Rectifier
- Transistor Mosfet N-CH 500V 25A 12SIP
4 Pages, 39 KB, Original- OMD500T
- International Rectifier
- 11 A, 500 V, 0.43 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 39 KB, Original- OMD500V
- International Rectifier
- 11 A, 500 V, 0.43 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Epson.com/OMD5000
709 Bytes - 15:29:27, 12 January 2026
Irf.com/OMD500
{"Terminal Finish":"TIN LEAD","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor A...
1482 Bytes - 15:29:27, 12 January 2026
Irf.com/OMD500T
{"Terminal Finish":"TIN LEAD","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor A...
1484 Bytes - 15:29:27, 12 January 2026
Irf.com/OMD500V
{"Terminal Finish":"TIN LEAD","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor A...
1488 Bytes - 15:29:27, 12 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 20MD500NNANNNNA0.pdf | 3.13 | 1 | Request | |
| 20MD500NNANNNNN0.pdf | 3.13 | 1 | Request | |
| 20MD500NNNNNNNN0.pdf | 3.13 | 1 | Request | |
| MD500.pdf | 0.08 | 1 | Request | |
| MD500_22_417F2.pdf | 0.63 | 1 | Request | |
| MD500_10_417F2.pdf | 0.63 | 1 | Request | |
| MD500_18_416F3G.pdf | 0.72 | 1 | Request | |
| MD500_16_417F2.pdf | 0.63 | 1 | Request | |
| MD500_18_406F3G.pdf | 0.63 | 1 | Request | |
| MD500_36_410F3G.pdf | 0.21 | 1 | Request | |
| MD500.pdf | 0.72 | 1 | Request | |
| MD500_12_417F2.pdf | 0.63 | 1 | Request |
