Product Datasheet Search Results:

NDB7060.pdf6 Pages, 51 KB, Original
NDB7060
Fairchild Semiconductor
N-Channel Enhancement Mode Field Effect Transistor
NDB7060L.pdf6 Pages, 48 KB, Original
NDB7060L
Fairchild Semiconductor
N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB7060L86Z.pdf12 Pages, 350 KB, Original
NDB7060L86Z
Fairchild Semiconductor Corporation
75 A, 60 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB7060L99Z.pdf6 Pages, 106 KB, Scan
NDB7060L99Z
Fairchild Semiconductor Corporation
75 A, 60 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB7060LL86Z.pdf6 Pages, 225 KB, Scan
NDB7060LL86Z
Fairchild Semiconductor Corporation
75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB7060LL99Z.pdf6 Pages, 107 KB, Scan
NDB7060LL99Z
Fairchild Semiconductor Corporation
75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB7060LS62Z.pdf6 Pages, 107 KB, Scan
NDB7060LS62Z
Fairchild Semiconductor Corporation
75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB7060S62Z.pdf6 Pages, 106 KB, Scan
NDB7060S62Z
Fairchild Semiconductor Corporation
75 A, 60 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
NDB7060.pdf6 Pages, 184 KB, Original
NDB7060
National Semiconductor
N-Channel Enhancement Mode Field Effect Transistor
NDB7060L.pdf6 Pages, 53 KB, Original
NDB7060L
National Semiconductor
N-Channel Enhancement Mode Field Effect Transistor
NDB7060L.pdf6 Pages, 48 KB, Original
NDB7060L
On Semiconductor
Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) TO-263AB

Product Details Search Results:

Fairchildsemi.com/NDB7060
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"3600pF @ 25V","Series":"-","Standard Package":"800","Supplier Device Package":"D\u00b2PAK","Datasheets":"NDP7060, NDB7060","Rds On (Max) @ Id, Vgs":"13 mOhm @ 40A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"150W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab...
1616 Bytes - 22:00:57, 12 January 2026
Fairchildsemi.com/NDB7060L
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"4000pF @ 25V","Series":"-","Standard Package":"1","Supplier Device Package":"D\u00b2PAK","Datasheets":"NDP7060L, NDB7060L","Rds On (Max) @ Id, Vgs":"15 mOhm @ 37.5A, 5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"150W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads...
1663 Bytes - 22:00:57, 12 January 2026
Fairchildsemi.com/NDB7060L86Z
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"550 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0130 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"225 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1540 Bytes - 22:00:57, 12 January 2026
Fairchildsemi.com/NDB7060L99Z
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"550 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0130 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"225 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1504 Bytes - 22:00:57, 12 January 2026
Fairchildsemi.com/NDB7060LL86Z
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"550 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"225 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1515 Bytes - 22:00:57, 12 January 2026
Fairchildsemi.com/NDB7060LL99Z
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"550 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0150 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"225 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1510 Bytes - 22:00:57, 12 January 2026
Fairchildsemi.com/NDB7060LS62Z
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"550 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0150 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"225 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1509 Bytes - 22:00:57, 12 January 2026
Fairchildsemi.com/NDB7060S62Z
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"550 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0130 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"225 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1506 Bytes - 22:00:57, 12 January 2026
Onsemi.com/NDB7060L
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"75(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Power Dissipation":"150(W)","Operating Temp Range":"-65C to 175C","Package Type":"TO-263AB","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1422 Bytes - 22:00:57, 12 January 2026

Documentation and Support

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