Product Datasheet Search Results:
1 Pages, 30 KB, Original- MMBT5551LT1
- Avic Electronics Corp.
- SOT-23 Plastic-Encapsulate Transistors
12 Pages, 498 KB, Original- MMBT5551L99Z
- Fairchild Semiconductor Corporation
- 200 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
6 Pages, 121 KB, Original- MMBT5551LT1
- Motorola / Freescale Semiconductor
- Silicon NPN Transistor
4 Pages, 136 KB, Original- MMBT5551LT1
- Leshan Radio Company Co., Ltd.
- High Voltage Transistors(NPN Silicon)
2 Pages, 132 KB, Scan- MMBT5551LT1-TP
- Micro Commercial Components Corp.
- 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
6 Pages, 99 KB, Original- MMBT5551L
- On Semiconductor
- Small Signal NPN
6 Pages, 175 KB, Original- MMBT5551LT1
- On Semiconductor
- TRANS NPN 160V 0.6A SOT23
6 Pages, 175 KB, Original- MMBT5551LT1G
- On Semiconductor
- TRANS NPN 160V 0.6A SOT23
6 Pages, 121 KB, Original- MMBT5551LT3
- On Semiconductor
- High Voltage Transistor NPN
6 Pages, 175 KB, Original- MMBT5551LT3G
- On Semiconductor
- TRANS NPN 160V 0.6A SOT-23
6 Pages, 175 KB, Original- SMMBT5551LT1G
- On Semiconductor
- TRANS NPN 160V 0.6A SOT23
Product Details Search Results:
Fairchildsemi.com/MMBT5551L99Z
{"Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"NPN","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"30","Collector Current-Max (IC)":"0.2000 A","Collector-emitter Voltage-Max":"160 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"100 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"REC...
1342 Bytes - 13:52:22, 05 January 2026
Mccsemi.com/MMBT5551LT1-TP
{"Terminal Finish":"MATTE TIN","Transistor Polarity":"NPN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3000 W","Collector Current-Max (IC)":"0.6000 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"160 V","Terminal Position":"DUAL","Surface Mount":"Yes","Mfr Pa...
1459 Bytes - 13:52:22, 05 January 2026
Onsemi.com/MMBT5551LT1
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","Frequency - Transition":"-","Transistor Type":"NPN","Product Photos":"SOT-23-3","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"200mV @ 5mA, 50mA","Series":"-","Package / Case":"TO-236-3, SC-59, SOT-23-3","Voltage - Collector Emitter Breakdown (Max)":"160V","Power - Max":"225mW","Packaging":"Cut Tape (CT)","Datasheets":"MMBT5550L-51L, SMMBT5551L","Current - Collector Cutoff (Max)":"100nA","Supplier...
1608 Bytes - 13:52:22, 05 January 2026
Onsemi.com/MMBT5551LT1G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","PCN Design/Specification":"Gold to Copper Wire 08/May/2007 Glue Mount Process 11/July/2008","Package / Case":"TO-236-3, SC-59, SOT-23-3","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 10mA, 5V","Frequency - Transition":"-","PCN Assembly/Origin":"Wafer Source Addition 26/Nov/2014","Voltage - Collector Emitter Breakdown (Max)":"160V","Datasheets":"MMBT5550L-51L, SMMBT5551L","Standard Package":"3,000","Transistor Type":"NPN"...
1946 Bytes - 13:52:22, 05 January 2026
Onsemi.com/MMBT5551LT3G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","PCN Design/Specification":"Gold to Copper Wire 08/May/2007","Package / Case":"TO-236-3, SC-59, SOT-23-3","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 10mA, 5V","Frequency - Transition":"-","PCN Assembly/Origin":"Wafer Source Addition 26/Nov/2014","Voltage - Collector Emitter Breakdown (Max)":"160V","Datasheets":"MMBT5550L-51L, SMMBT5551L","Standard Package":"1","Transistor Type":"NPN","Family":"Transistors (BJT) - Singl...
1911 Bytes - 13:52:22, 05 January 2026
Onsemi.com/SMMBT5551LT1G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","Online Catalog":"NPN Transistors","Transistor Type":"NPN","Frequency - Transition":"-","Product Photos":"SOT-23-3","Vce Saturation (Max) @ Ib, Ic":"200mV @ 5mA, 50mA","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"3,000","Voltage - Collector Emitter Breakdown (Max)":"160V","Supplier Device Package":"SOT-23-3 (TO-236)","Packaging":"Tape & Reel (TR)","Datasheets":"MMBT5550L-51L, SMMBT5551L","Po...
1780 Bytes - 13:52:22, 05 January 2026
Onsemi.com/SMMBT5551LT3G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"600mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 10mA, 5V","Transistor Type":"NPN","Product Photos":"SOT-23-3","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"200mV @ 5mA, 50mA","Current - Collector Cutoff (Max)":"100nA","Series":"-","Standard Package":"10,000","Voltage - Collector Emitter Breakdown (Max)":"160V","Supplier Device Package":"SOT-23-3 (TO-236)","Packaging":"Tape & Reel (TR)","Datasheets":...
1588 Bytes - 13:52:22, 05 January 2026
Unisonic.com.tw/MMBT5551L-A-AE3-R
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"80","Collector Current-Max (IC)":"0.6000 A","Collector-emitter Voltage-Max":"160 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"300 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polari...
1438 Bytes - 13:52:22, 05 January 2026
Unisonic.com.tw/MMBT5551L-B-AE3-R
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"150","Collector Current-Max (IC)":"0.6000 A","Collector-emitter Voltage-Max":"160 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"300 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polar...
1439 Bytes - 13:52:22, 05 January 2026
Unisonic.com.tw/MMBT5551L-C-AE3-R
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LEAD FREE PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"200","Collector Current-Max (IC)":"0.6000 A","Collector-emitter Voltage-Max":"160 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"300 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Polar...
1439 Bytes - 13:52:22, 05 January 2026
Various/MMBT5551LT1
Medium Power, General Purpose, MMBT5551LT1, Silicon, NPN, 200mW, 180V, 160V, 5V, 600mA, 175°C, 100MHz, 10, 80/250, MOT, SOT323...
613 Bytes - 13:52:22, 05 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| GVMMBTU.pdf | 2.77 | 1 | Request |
