Product Datasheet Search Results:
1 Pages, 174 KB, Scan- MJ10012
- Advanced Semiconductor, Inc.
- RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE
4 Pages, 182 KB, Original- MJ10012
- Boca Semiconductor
- NPN SILICON POWER DARLINGTON TRANSISTORS
4 Pages, 51 KB, Original- MJ10012
- Central Semiconductor Corp.
- 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-3
4 Pages, 51 KB, Original- MJ10012LEADFREE
- Central Semiconductor Corp.
- 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-3
6 Pages, 96 KB, Original- MJ10012
- Motorola / Freescale Semiconductor
- 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS
1 Pages, 89 KB, Original- MJ10012
- Micro Commercial Components
- TRANS DARLINGTON BJT NPN 400V 10A 3TO-3
1 Pages, 89 KB, Original- MJ10012-BP
- Micro Commercial Components
- TRANS DARLINGTON BJT NPN 400V 10A 3TO-3
4 Pages, 177 KB, Original- MJ10012
- Mospec Semiconductor
- POWER TRANSISTORS(10A,400V,175W)
3 Pages, 57 KB, Original- MJ10012
- Nte Electronics, Inc.
- NPN Silicon Power Darlington Transistor
3 Pages, 57 KB, Original- MJ10012
- Nte Electronics
- Bipolar (BJT) Single Transistor, NPN, 400 V, 175 W, 10 A, 300
1 Pages, 59 KB, Original- MJ10012
- On Semiconductor
- Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar Power, NPN, 10A, 400V, Pkg Style TO204
Product Details Search Results:
Centralsemi.com/MJ10012
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-3, 2 PIN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"175 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"400 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"DARLINGTON","Tran...
1291 Bytes - 23:16:58, 16 January 2026
Centralsemi.com/MJ10012LEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"METAL","Mfr Package Description":"TO-3, 2 PIN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"175 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"400 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Packag...
1396 Bytes - 23:16:58, 16 January 2026
N_a/MJ10012
{"Category":"Transistor","Amps":"15A","MHz":"<1 MHz","Volts":"600V"}...
504 Bytes - 23:16:58, 16 January 2026
Nteinc.com/MJ10012
{"Minimum DC Current Gain":"20","Transistor Type":"NPN","Maximum Collector Base Voltage":"600 V","Mounting Type":"Through Hole","Maximum Power Dissipation":"175 W","Maximum Collector Emitter Saturation Voltage":"2.5 V","Maximum Collector Emitter Voltage":"400 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"3 V","Base Current":"2 A","Height":"8.89 mm","Maximum Collector Cutoff Current":"1 mA","Maximum Continuous Collector Current":"10 A","Number of Elements p...
1678 Bytes - 23:16:58, 16 January 2026
Nteinc.com/MJ10012
{"Minimum DC Current Gain":"20","Transistor Type":"NPN","Maximum Collector Base Voltage":"600 V","Mounting Type":"Through Hole","Maximum Power Dissipation":"175 W","Maximum Collector Emitter Saturation Voltage":"2.5 V","Maximum Collector Emitter Voltage":"400 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"3 V","Base Current":"2 A","Height":"8.89 mm","Maximum Collector Cutoff Current":"1 mA","Maximum Continuous Collector Current":"10 A","Number of Elements p...
1678 Bytes - 23:16:58, 16 January 2026
Onsemi.com/MJ10012G
{"Status":"ACTIVE","Package Body Material":"METAL","Mfr Package Description":"GREEN, TO-3, 2 PIN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"20","Collector-emitter Voltage-Max":"400 V","Transistor Application":"SWITCHING","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"DARLINGTON WITH BUILT-IN DIODE AND RESISTOR...
1301 Bytes - 23:16:58, 16 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2TFJ100122R1001.pdf | 0.07 | 1 | Request | |
| 3J10012.pdf | 0.07 | 1 | Request | |
| 2TFJ100128R1001.pdf | 0.07 | 1 | Request | |
| 2TFJ100121R1001.pdf | 0.07 | 1 | Request | |
| 2TFJ100127R1001.pdf | 0.07 | 1 | Request | |
| 2TFJ100120R1001.pdf | 0.07 | 1 | Request | |
| 2TFJ100124R1001.pdf | 0.07 | 1 | Request | |
| 2TFJ100129R1001.pdf | 0.07 | 1 | Request | |
| 2TFJ100126R1001.pdf | 0.07 | 1 | Request | |
| 2TFJ100123R1001.pdf | 0.07 | 1 | Request | |
| 2J10012.pdf | 0.08 | 1 | Request | |
| 2TFJ100125R1001.pdf | 0.07 | 1 | Request |
