Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-247","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"-","Standard Package":"30","Supplier Device Package":"TO-247 (IXTH)","Datasheets":"IXTH12N100L","Rds On (Max) @ Id, Vgs":"1.3 Ohm @ 500mA, 20V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"400W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"1000V (1kV)","Current...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-247","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Series":"-","Standard Package":"30","Supplier Device Package":"TO-247 (IXTH)","Datasheets":"IXTH12N100L","Rds On (Max) @ Id, Vgs":"1.3 Ohm @ 500mA, 20V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"400W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"1000V (1kV)","Current...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"25 A","Channel Type":"N-CHANNEL"...