Product Datasheet Search Results:
- IXFM11N80
- Ixys Corporation
- N-Channel Enhancement Mode HiPerFET Power MOSFET
Product Details Search Results:
Zilog.com/IXFM11N80
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...
1451 Bytes - 10:02:37, 07 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IXFM11N80.pdf | 0.09 | 1 | Request |






