Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-264","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 8mA","Series":"HiPerFET\u2122","Standard Package":"25","Supplier Device Package":"TO-264AA (IXFK)","Datasheets":"IXFK/IXFN (44,48)N50","Rds On (Max) @ Id, Vgs":"120 mOhm @ 22A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"500W","Package / Case":"TO-264-3, TO-264AA","Mounting Type":"Through Hole","Drain to Source Voltage (Vds...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-264","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 4mA","Series":"HiPerFET\u2122","Standard Package":"25","Supplier Device Package":"TO-264AA (IXFK)","Datasheets":"IXF(K,X)4(4,8)N50Q","Rds On (Max) @ Id, Vgs":"120 mOhm @ 22A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"500W","Package / Case":"TO-264-3, TO-264AA","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)...

{"C(iss) Max. (F)":"8.4n","Absolute Max. Power Diss. (W)":"500","g(fs) Max, (S) Trans. conduct,":"42","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"100n","r(DS)on Max. (Ohms)":".12","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"176","I(GSS) Max. (A)":"200n","g(fs) Min. (S) Trans. conduct.":"30","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"22","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0","Package":"TO-264var","Military":"N","...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"44(A)","Mounting":"Through Hole","Drain-Source On-Volt":"500(V)","Power Dissipation":"658(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-264","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"44 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"176 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"1700 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"44 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1400 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"110 A","Channel Type":"N-CHAN...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"2500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"44 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"176 A","Channel Type":"N-CHANNEL"...