Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"3.8(W)","Continuous Drain Current":"116(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"30(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"116(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"116A (Tc)","Gate Charge (Qg) @ Vgs":"60nC @ 4.5V","Product Photos":"TO-263","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"7 mOhm @ 60A, 10V","Datasheets":"IRL2203NS(NL)","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"50","Drain...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"116A (Tc)","Gate Charge (Qg) @ Vgs":"60nC @ 4.5V","Product Photos":"TO-263","PCN Assembly/Origin":"Alternate Assembly Site 11/Nov/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"7 mOhm @ 60A, 10V","Datasheets...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"290 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL","FET Te...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"116A (Tc)","Gate Charge (Qg) @ Vgs":"60nC @ 4.5V","Product Photos":"TO-263","PCN Assembly/Origin":"Alternate Assembly Site 11/Nov/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rd...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRL2203NS Saber Model IRL2203NS Spice Model","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRL2203NS(NL)","Rds On (Max) @ Id, Vgs":"7 mOhm @ 60A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge (Qg) @ Vgs":"60nC @ 4.5V","Product Photos":"TO-263","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"7 mOhm @ 60A, 10V","Datasheets":"IRL2203N(S,L)PbF","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"800","Drain to Source Voltage (Vdss)":"30V","PCN Obsolescence/ EO...