Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"65 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-251-3-Short-Leads,-IPak,-TO-251AA","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"70","Supplier Device Package":"I-Pak","Datasheets":"IRF(R,U)220B","Rds On (Max) @ Id, Vgs":"800 mOhm @ 2.3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"2.5W","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Mounting Type":"Through Hole","Dra...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-251-3-Short-Leads,-IPak,-TO-251AA","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"70","Supplier Device Package":"I-Pak","Datasheets":"IRF(R,U)220B","Rds On (Max) @ Id, Vgs":"800 mOhm @ 2.3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"2.5W","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Mounting Type":"Through Hole","Dra...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-251-3-Short-Leads,-IPak,-TO-251AA","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"5,040","Supplier Device Package":"I-Pak","Datasheets":"IRF(R,U)220B","Rds On (Max) @ Id, Vgs":"800 mOhm @ 2.3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"2.5W","Package / Case":"TO-251-3 Short Leads, IPak, TO-251AA","Mounting Type":"Through Hole","...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-251-3-Short-Leads,-IPak,-TO-251AA","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"330pF @ 25V","Series":"-","Standard Package":"75","Supplier Device Package":"I-Pak","Datasheets":"IRFR220, IRFU220","Rds On (Max) @ Id, Vgs":"800 mOhm @ 2.4A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"50W","Package / Case":"TO-251-3 Short Leads, I...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"5(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Packaging":"Rail/Tube","Power Dissipation":"43(W)","Operating Temp Range":"-55C to 175C","Package Type":"IPAK","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRFR220NPBF Saber Model IRFR220NPBF Spice Model","Product Photos":"DPAK_369D\u221201","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"75","Supplier Device Package":"I-Pak","Datasheets":"IRFR220N, IRFU220N","Rds On (Max) @ Id, Vgs":"600 mOhm @ 2.9A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"43W","Other Names":"*IRFU220N"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-251-3 Long Leads, IPak, TO-251AB","Gate Charge (Qg) @ Vgs":"23nC @ 10V","Product Photos":"DPAK_369D\u221201","PCN Assembly/Origin":"Assembly Site Addition 30/Jun/2014","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"600 mOhm @ 2.9...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"4.6(A)","Mounting":"Through Hole","Drain-Source On-Volt":"200(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"IPAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Rise Time":"22 ns","Typical Turn-Off Delay Time":"19 ns","Description":"Value","Maximum Continuous Drain Current":"4.8 A","Package":"3IPAK","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"7.2 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"800@10V mOhm","Manufacturer":"Vishay / Semiconductor","Typical Fall Time":"13 ns"}...