Product Datasheet Search Results:
4 Pages, 200 KB, Original- IRFP352
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRFP352
- Frederick Components
- Power MOSFET Selection Guide
2 Pages, 122 KB, Scan- IRFP352
- General Electric
- Power Transistor Data Book 1985
5 Pages, 197 KB, Scan- IRFP352
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 204 KB, Scan- IRFP352R
- Harris Semiconductor
- Power MOSFET Data Book 1990
1 Pages, 38 KB, Scan- IRFP352
- International Rectifier
- 14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
1 Pages, 38 KB, Scan- IRFP352PBF
- International Rectifier
- 14 A, 400 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
1 Pages, 48 KB, Original- IRFP352R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
12 Pages, 1094 KB, Original- IRFP352
- Ixys Corporation
- High Voltage Power MOSFETs
5 Pages, 216 KB, Scan- IRFP352
- Samsung Electronics
- N-CHANNEL POWER MOSFETS
Product Details Search Results:
Irf.com/IRFP352
{"Status":"DISCONTINUED","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"56 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configur...
1353 Bytes - 09:30:37, 15 January 2026
Irf.com/IRFP352PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Break...
1416 Bytes - 09:30:37, 15 January 2026
Various/IRFP352R
{"C(iss) Max. (F)":"2.0n","Absolute Max. Power Diss. (W)":"180","V(BR)DSS (V)":"400","g(fs) Max, (S) Trans. conduct,":"10","I(D) Abs. Max.(A) Drain Curr.":"8.9","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"110n","r(DS)on Max. (Ohms)":"400m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"56","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"8.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.0","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)...
1263 Bytes - 09:30:37, 15 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRFP360.pdf | 0.04 | 1 | Request | |
| IRFP3710.pdf | 0.15 | 1 | Request | |
| IRFP3077.pdf | 0.29 | 1 | Request | |
| IRFP3206.pdf | 0.29 | 1 | Request | |
| IRFP3306.pdf | 0.29 | 1 | Request | |
| IRFP3415.pdf | 0.49 | 1 | Request | |
| IRFP3703.pdf | 0.17 | 1 | Request |
