Product Datasheet Search Results:

IRFBC40LC.pdf8 Pages, 168 KB, Scan
IRFBC40LCPBF.pdf8 Pages, 168 KB, Scan
IRFBC40LCPBF
International Rectifier
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRFBC40LC.pdf1 Pages, 35 KB, Original
IRFBC40LC
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
IRFBC40LC.pdf67 Pages, 163 KB, Original
IRFBC40LC
Toshiba
Power MOSFETs Cross Reference Guide
IRFBC40LC.pdf9 Pages, 213 KB, Original
IRFBC40LC
Vishay Presicion Group
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFBC40LC-002.pdf2 Pages, 68 KB, Scan
IRFBC40LC-002
Vishay Presicion Group
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFBC40LC-002PBF.pdf2 Pages, 68 KB, Scan
IRFBC40LC-002PBF
Vishay Presicion Group
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFBC40LC-003.pdf2 Pages, 68 KB, Scan
IRFBC40LC-003
Vishay Presicion Group
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFBC40LC-003PBF.pdf2 Pages, 68 KB, Scan
IRFBC40LC-003PBF
Vishay Presicion Group
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFBC40LC-004.pdf2 Pages, 68 KB, Scan
IRFBC40LC-004
Vishay Presicion Group
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFBC40LC-004PBF.pdf2 Pages, 68 KB, Scan
IRFBC40LC-004PBF
Vishay Presicion Group
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFBC40LC-005.pdf2 Pages, 68 KB, Scan
IRFBC40LC-005
Vishay Presicion Group
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Product Details Search Results:

Vishay.com/IRFBC40LC
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1100pF @ 25V","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Datasheets":"IRFBC40LC Packaging Information","Rds On (Max) @ Id, Vgs":"1.2 Ohm @ 3.7A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"125W","Package / Case":"TO-220-3","Mounting Type":"Th...
1632 Bytes - 19:03:19, 14 January 2026
Vishay.com/IRFBC40LC-002
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6.2 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"...
1381 Bytes - 19:03:19, 14 January 2026
Vishay.com/IRFBC40LC-002PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transistor Application"...
1441 Bytes - 19:03:19, 14 January 2026
Vishay.com/IRFBC40LC-003
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6.2 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"...
1381 Bytes - 19:03:19, 14 January 2026
Vishay.com/IRFBC40LC-003PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transistor Application"...
1443 Bytes - 19:03:19, 14 January 2026
Vishay.com/IRFBC40LC-004
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6.2 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"...
1379 Bytes - 19:03:19, 14 January 2026
Vishay.com/IRFBC40LC-004PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transistor Application"...
1443 Bytes - 19:03:19, 14 January 2026
Vishay.com/IRFBC40LC-005
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6.2 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"...
1379 Bytes - 19:03:19, 14 January 2026
Vishay.com/IRFBC40LC-005PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transistor Application"...
1442 Bytes - 19:03:19, 14 January 2026
Vishay.com/IRFBC40LC-006
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"6.2 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"...
1379 Bytes - 19:03:19, 14 January 2026
Vishay.com/IRFBC40LC-006PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transistor Application"...
1441 Bytes - 19:03:19, 14 January 2026
Vishay.com/IRFBC40LC-007
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6.2 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-M...
1341 Bytes - 19:03:19, 14 January 2026

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
IRFB4410Z.pdf0.421Request
IRFB4215.pdf0.201Request
IRFB4229.pdf0.291Request
IRFB3507.pdf0.241Request
IRFB4110.pdf0.271Request
IRFB4019.pdf0.281Request
IRFB59N10D.pdf0.141Request
IRFB3207ZG.pdf0.281Request
IRFB3306G.pdf0.291Request
IRFB3004.pdf0.451Request
IRFB3607.pdf0.411Request
IRFB3207.pdf0.371Request