Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4.9(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"50 mOhm @ 2.7A, 10V","FET Feature":"Logic Level Gate","Mounting Type":"Surface Mount","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"3V @ 100\u00b5A","Series":"HEXFET\u00ae","Standard Package":"95","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Packaging":"Tube","FET Type":"2 N-Channel (Dual)","Datasheets":"AUIRF7303Q","Power - Max":"2.4W","Package / Case":"8-SOIC (0.1...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 100\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"5.3A","Gate Charge (Qg) @ Vgs":"21nC @ 10V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"50 mOhm @ 2.7A, 10V","Datasheets":"AUIRF7303Q","FET Type":"2 N-Channel (Dual)","PCN Packaging":"Package Drawing Update ...

{"Status":"EOL/LIFEBUY","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.4 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"4 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"2","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SEPA...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"4.9A","Gate Charge (Qg) @ Vgs":"25nC @ 10V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"50 mOhm @ 2.4A, 10V","Datasheets":"IRF7303PbF","FET Type":"2 N-Channel (Dual)","PCN Packag...

{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Rise Time":"21 ns","Typical Turn-Off Delay Time":"22 ns","Description":"Value","Maximum Continuous Drain Current":"4.9 A","Package":"8SOIC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"6.8 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"50@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"7.7 ns"}...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.9 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Ty...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"8-SOIC","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"520pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"1","Supplier Device Package":"8-SO","Datasheets":"IRF7303QPbF","Rds On (Max) @ Id, Vgs":"50 mOhm @ 2.4A, 10V","FET Type":"2 N-Channel (Dual)","Packaging":"Digi-Reel\u00ae","Power - Max":"2W","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Mounting Type":"Su...

{"Status":"EOL/LIFEBUY","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.4 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"4 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"2","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SEPA...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"4.9A","Gate Charge (Qg) @ Vgs":"25nC @ 10V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"50 mOhm @ 2.4A, 10V","Datasheets":"...