Product Datasheet Search Results:
9 Pages, 239 KB, Original- IRF7301PBF
- Infineon Technologies Americas Corp.
- MOSFET 2N-CH 20V 5.2A 8-SOIC
9 Pages, 104 KB, Original- IRF7301TRPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 20V 5.2A 8-Pin SOIC T/R
9 Pages, 104 KB, Original- IRF7301
- International Rectifier
- 4.3 A, 20 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
9 Pages, 239 KB, Original- IRF7301PBF
- International Rectifier
- MOSFET 2N-CH 20V 5.2A 8-SOIC
9 Pages, 104 KB, Original- IRF7301TR
- International Rectifier
- 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
9 Pages, 239 KB, Original- IRF7301TRPBF
- International Rectifier
- MOSFET 2N-CH 20V 5.2A 8-SOIC
Product Details Search Results:
Infineon.com/IRF7301PBF
971 Bytes - 17:42:49, 16 January 2026
Infineon.com/IRF7301TRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b112(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"5.2(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"20(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1470 Bytes - 17:42:49, 16 January 2026
Irf.com/IRF7301
{"Status":"DISCONTINUED","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.4 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"4.3 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"2","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...
1390 Bytes - 17:42:49, 16 January 2026
Irf.com/IRF7301PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Family":"FETs - Arrays","Product Photos":"8-SOIC","Vgs(th) (Max) @ Id":"700mV @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Datasheets":"IRF7301PbF","Rds On (Max) @ Id, Vgs":"50 mOhm @ 2.6A, 4.5V","FET Type":"2 N-Channel (Dual)","Packagi...
1735 Bytes - 17:42:49, 16 January 2026
Irf.com/IRF7301TRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"700mV @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"5.2A","Gate Charge (Qg) @ Vgs":"20nC @ 4.5V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"50 mOhm @ 2.6A, 4.5V","Datasheets":"IRF7301PbF","FET Type":"2 N-Channel (Dual)...
1964 Bytes - 17:42:49, 16 January 2026
Irf.com/IRF7301TRPBF-EL
{"Category":"MOSFET","Maximum Drain Source Voltage":"20 V","Typical Rise Time":"42 ns","Typical Turn-Off Delay Time":"32 ns","Description":"Value","Maximum Continuous Drain Current":"5.2 A","Package":"8SOIC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b112 V","Typical Turn-On Delay Time":"9 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"50@4.5V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"51 ns"}...
1380 Bytes - 17:42:49, 16 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF7301.pdf | 0.10 | 1 | Request |
