Product Datasheet Search Results:
- IRF710BJ69Z
- Fairchild Semiconductor Corporation
- 2 A, 400 V, 3.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fairchildsemi.com/IRF710BJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"6 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"100 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"2 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type"...
1484 Bytes - 23:54:19, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF7103.pdf | 0.16 | 1 | Request | |
| IRF7105.pdf | 0.26 | 1 | Request | |
| IRF7101.pdf | 0.25 | 1 | Request | |
| IRF7105Q.pdf | 0.31 | 1 | Request | |
| IRF7103I.pdf | 0.30 | 1 | Request | |
| IRF7104.pdf | 0.15 | 1 | Request | |
| IRF7103Q.pdf | 0.26 | 1 | Request |




