Product Datasheet Search Results:
1 Pages, 41 KB, Scan- IRF710-001
- Vishay Presicion Group
- 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET
1 Pages, 41 KB, Scan- IRF710-001PBF
- Vishay Presicion Group
- 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Vishay.com/IRF710-001
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"5 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"2 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package S...
1388 Bytes - 08:16:33, 14 January 2026
Vishay.com/IRF710-001PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"3.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"5 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1448 Bytes - 08:16:33, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF7103.pdf | 0.16 | 1 | Request | |
| IRF7105.pdf | 0.26 | 1 | Request | |
| IRF7101.pdf | 0.25 | 1 | Request | |
| IRF7105Q.pdf | 0.31 | 1 | Request | |
| IRF7103I.pdf | 0.30 | 1 | Request | |
| IRF7104.pdf | 0.15 | 1 | Request | |
| IRF7103Q.pdf | 0.26 | 1 | Request |
