Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L,Z) Series Side 1 IR(F,L,Z) Series Side 2","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"4.4A (Tc)","Gate Charge (Qg) @ Vgs":"14nC @ 10V","Product Photos":"TO-263","Rds On (Max) @ Id, Vgs":"1.1 Ohm @ 2.6A, 10V","Datasheets":"IRF624SPBF","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1,000","D...

{"Category":"Power MOSFET","Dimensions":"10.67 x 9.65 x 4.83 mm","Maximum Continuous Drain Current":"4.4 A","Width":"9.65 mm","Maximum Drain Source Voltage":"250 V","Package Type":"D2PAK","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 14 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"7 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"260 pF @ 25 V","Length...