Product Datasheet Search Results:
11 Pages, 223 KB, Original- IRF520VSTRL
- International Rectifier
- 9.6 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET
11 Pages, 223 KB, Original- IRF520VSTRLPBF
- International Rectifier
- 9.6 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Irf.com/IRF520VSTRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"44 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"37 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1530 Bytes - 06:52:56, 14 January 2026
Irf.com/IRF520VSTRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"44 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"37 A","Channel Type":"N...
1616 Bytes - 06:52:56, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF520VS.pdf | 0.13 | 1 | Request |
