Product Datasheet Search Results:

IRF422.pdf5 Pages, 158 KB, Scan
IRF422
Fairchild Semiconductor
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
IRF422.pdf4 Pages, 200 KB, Original
IRF422.pdf4 Pages, 200 KB, Original
IRF422
Frederick Components
Power MOSFET Selection Guide
IRF422.pdf1 Pages, 38 KB, Scan
IRF422
Motorola
European Master Selection Guide 1986
IRF422.pdf5 Pages, 163 KB, Scan
IRF422
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.
IRF422.pdf5 Pages, 174 KB, Scan
IRF422
Harris Semiconductor
Power MOSFET Data Book 1990
IRF422.pdf7 Pages, 49 KB, Original
IRF422
Intersil Corporation
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 ?, N-Channel Power MOSFETs
IRF422.pdf1 Pages, 96 KB, Scan
IRF422.pdf3 Pages, 166 KB, Scan
IRF422
N/a
FET Data Book
IRF422.pdf5 Pages, 212 KB, Scan
IRF422
Samsung Electronics
N-CHANNEL POWER MOSFETS
IRF422.pdf5 Pages, 206 KB, Scan
IRF422
Siliconix
MOSPOWER Design Data Book 1983

Product Details Search Results:

Irf.com/IRF420
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"8 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source ...
1312 Bytes - 23:31:48, 16 January 2026

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