Product Datasheet Search Results:
11 Pages, 141 KB, Original- IRF3415L
- International Rectifier
- MOSFET N-CH 150V 43A TO-262
10 Pages, 142 KB, Original- IRF3415LPBF
- International Rectifier
- 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
11 Pages, 141 KB, Original- IRF3415LTRL
- International Rectifier
- 43 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 Pages, 141 KB, Original- IRF3415LTRR
- International Rectifier
- 43 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Product Details Search Results:
Irf.com/IRF3415L
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"TO-262","Datasheets":"IRF3415S/L","Rds On (Max) @ Id, Vgs":"42 mOhm @ 22A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.8W","Standard Package":"50","Input Capacitance (Ciss) @ Vds":"2400pF @ 25V"...
1477 Bytes - 17:36:29, 14 January 2026
Irf.com/IRF3415LPBF
935 Bytes - 17:36:29, 14 January 2026
Irf.com/IRF3415LTRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"590 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"43 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0420 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"150 A","Channel Type":"N-CHANNEL","FE...
1552 Bytes - 17:36:29, 14 January 2026
Irf.com/IRF3415LTRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"590 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"43 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0420 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"150 A","Channel Type":"N-CHANNEL","FE...
1551 Bytes - 17:36:29, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF3415L.pdf | 0.15 | 1 | Request |
