Product Datasheet Search Results:
6 Pages, 178 KB, Scan- IRF230
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 12A, 150-200 V
6 Pages, 178 KB, Scan- IRF230-233
- Fairchild Semiconductor
- N-Channel Power MOSFETs 12A 150-200 V
4 Pages, 200 KB, Original- IRF230
- Frederick Components
- Power MOSFET Selection Guide
19 Pages, 625 KB, Original- IRF230
- Motorola / Freescale Semiconductor
- TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
5 Pages, 161 KB, Scan- IRF230
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A.
2 Pages, 129 KB, Scan- IRF230
- General Electric
- Power Transistor Data Book 1985
1 Pages, 41 KB, Original- IRF230
- Harris Semiconductor
- Power MOSFET Selection Guide
5 Pages, 185 KB, Scan- IRF230R
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 49 KB, Original- IRF230
- Intersil Corporation
- 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 ?, N-Channel Power MOSFETs
7 Pages, 147 KB, Original- IRF230
- International Rectifier
- Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3
92 Pages, 2885 KB, Scan- IRF230E
- International Rectifier
- 9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
92 Pages, 2885 KB, Scan- IRF230EA
- International Rectifier
- 9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Product Details Search Results:
Irf.com/IRF230
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1481 Bytes - 12:54:21, 14 January 2026
Irf.com/IRF230E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1421 Bytes - 12:54:21, 14 January 2026
Irf.com/IRF230EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1427 Bytes - 12:54:21, 14 January 2026
Irf.com/IRF230EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1491 Bytes - 12:54:21, 14 January 2026
Irf.com/IRF230EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1427 Bytes - 12:54:21, 14 January 2026
Irf.com/IRF230EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1493 Bytes - 12:54:21, 14 January 2026
Irf.com/IRF230EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1427 Bytes - 12:54:21, 14 January 2026
Irf.com/IRF230ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1494 Bytes - 12:54:21, 14 January 2026
Irf.com/IRF230ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min"...
1425 Bytes - 12:54:21, 14 January 2026
Irf.com/IRF230EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1490 Bytes - 12:54:21, 14 January 2026
Irf.com/IRF230EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1486 Bytes - 12:54:21, 14 January 2026
Irf.com/IRF230PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"54 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"36 A","Channel Type":"N-CHANNEL","FET Technology":"META...
1550 Bytes - 12:54:21, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF2805S.pdf | 0.22 | 1 | Request | |
| IRF2907Z.pdf | 0.36 | 1 | Request | |
| IRF2204.pdf | 0.14 | 1 | Request | |
| IRF2204L.pdf | 0.22 | 1 | Request | |
| IRF2807L.pdf | 0.13 | 1 | Request | |
| IRF2807.pdf | 0.16 | 1 | Request | |
| IRF2907ZS.pdf | 0.36 | 1 | Request | |
| IRF2804L.pdf | 0.64 | 1 | Request | |
| IRF2807ZS.pdf | 0.27 | 1 | Request | |
| IRF2804S-7P.pdf | 0.28 | 1 | Request | |
| IRF2805.pdf | 0.15 | 1 | Request | |
| IRF2807S.pdf | 0.13 | 1 | Request |
