Product Datasheet Search Results:
10 Pages, 509 KB, Original- IPI076N12N3G
- Infineon Technologies Ag
- 100 A, 120 V, 0.0076 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
10 Pages, 509 KB, Original- IPI076N12N3GAKSA1
- Infineon Technologies
- Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-262
Product Details Search Results:
Infineon.com/IPI076N12N3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"230 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"100 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0076 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL"...
1563 Bytes - 19:13:48, 15 January 2026
Infineon.com/IPI076N12N3GAKSA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"120 V","Typical Rise Time":"50 ns","Typical Turn-Off Delay Time":"39 ns","Description":"Value","Maximum Continuous Drain Current":"100 A","Package":"3TO-262","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"24 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"7.6@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"10 ns"}...
1559 Bytes - 19:13:48, 15 January 2026
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPI076N12N3G.pdf | 0.56 | 1 | Request |
