Product Datasheet Search Results:
9 Pages, 148 KB, Original- IPD50P04P4-13
- Infineon Technologies Ag
- 50 A, 40 V, 0.0126 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
Product Details Search Results:
Infineon.com/IPD50P04P4-13
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"18 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0126 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1526 Bytes - 08:17:05, 14 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPD50P04P4-13.pdf | 0.14 | 1 | Request |
