Product Datasheet Search Results:
11 Pages, 734 KB, Original- IPB108N15N3G
- Infineon Technologies Ag
- 83 A, 150 V, 0.0108 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
11 Pages, 760 KB, Original- IPB108N15N3GATMA1
- Infineon Technologies
- Trans MOSFET N-CH 150V 83A 3-Pin(2+Tab) TO-263
Product Details Search Results:
Infineon.com/IPB108N15N3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"330 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"83 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0108 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"332 A","Channel Type":"N-CHANNEL","FE...
1608 Bytes - 09:19:09, 15 January 2026
Infineon.com/IPB108N15N3GATMA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"150 V","Typical Rise Time":"35 ns","Typical Turn-Off Delay Time":"32 ns","Description":"Value","Maximum Continuous Drain Current":"83 A","Package":"3TO-263","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"17 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"10.8@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"9 ns"}...
1533 Bytes - 09:19:09, 15 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPB108N15N3G.pdf | 0.72 | 1 | Request |
