Product Datasheet Search Results:
8 Pages, 452 KB, Original- FS100R12KT4_B11
- Infineon Technologies Ag
- 1200 V, N-CHANNEL IGBT
Product Details Search Results:
Infineon.com/FS100R12KT4_B11
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"490 ns","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"185 ns","EU RoHS Compliant":"Yes","Configuration":"BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","Transisto...
1431 Bytes - 03:08:31, 12 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FS100R12KT4_B11.pdf | 0.27 | 1 | Request |
