Product Datasheet Search Results:
9 Pages, 1685 KB, Original- FD650R17IE4
- Infineon Technologies Ag
- 930 A, 1700 V, N-CHANNEL IGBT
9 Pages, 156 KB, Original- FD650R17IE4D_B2
- Infineon Technologies
- Trans MOSFET N-CH 60V 20A 8-Pin TDSON EP
Product Details Search Results:
Infineon.com/FD650R17IE4
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"1870 ns","Collector Current-Max (IC)":"930 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"720 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE AND THERMISTOR","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1700 V","Channel Type":"N-CHANNEL...
1427 Bytes - 16:46:17, 12 January 2026
Infineon.com/FD650R17IE4D_B2
{"Factory Pack Quantity":"3","Brand":"Infineon Technologies","Product Category":"IGBT Modules","RoHS":"Details","Manufacturer":"Infineon"}...
1051 Bytes - 16:46:17, 12 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FD650R17IE4.pdf | 1.65 | 1 | Request | |
| FD650R17IE4D_B2.pdf | 2.90 | 1 | Request | |
| FD650R17IE4.pdf | 0.46 | 1 | Request | |
| TI_FD650R17IE4.pdf | 1.65 | 1 | Request |
