Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"45 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"310 mOhm @ 1.7A, 5V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP372E6327T SP000011120","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP372","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounting Typ...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"310 mOhm @ 1.7A, 5V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP372L6327INDKR","Packaging":"Digi-Reel\u00ae","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP372","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounting Type":"Surface M...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"45 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (ID...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd14 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Drain-Source On-Volt":"100 V","Packaging":"Tape and Reel","Power Dissipation":"1.8 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd14 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Drain-Source On-Volt":"100 V","Packaging":"Tape and Reel","Power Dissipation":"1.8 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Product Category":"MOSFET","Series":"BSP372","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP372NH6327XTSA1","RoHS":"Details","Manufacturer":"Infineon"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 4.5V Drive","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.8V @ 218\u00b5A","Series":"OptiMOS\u2122","Package / Case":"TO-261-4, TO-261AA","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP372N","Rds On (Max) @ Id, Vgs":"230 mOhm @ 1.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.8W","Standard Package":"1,000","Input Capacitance (Ciss) @...