Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.5 W","Avalanche Energy Rating (Eas)":"130 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.4000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1.6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SE...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"4 Ohm @ 400mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP299E6327T SP000011110","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP299","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounting Type...

{"Product Category":"MOSFET","Series":"BSP299","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP299H6327XUSA1","RoHS":"Details","Manufacturer":"Infineon"}...

{"Factory Pack Quantity":"1000","Vds - Drain-Source Breakdown Voltage":"500 V","Transistor Polarity":"N-Channel","Vgs th - Gate-Source Threshold Voltage":"3 V","Qg - Gate Charge":"2.5 uC","Package / Case":"SOT-223-3","Part # Aliases":"SP001058628","Fall Time":"30 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Infineon","Forward Transconductance -...

{"Category":"MOSFET","Maximum Drain Source Voltage":"500 V","Typical Rise Time":"15 ns","Typical Turn-Off Delay Time":"55 ns","Description":"Value","Maximum Continuous Drain Current":"0.4 A","Package":"4SOT-223","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"8 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"4@10V Ohm","Manufacturer":"Infineon Technologies","Typical Fall Time":"30 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Input Capacitance (Ciss) @ Vds":"400pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP299","Rds On (Max) @ Id, Vgs":"4 Ohm @ 400mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounting Typ...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.4 A","Mounting":"Surface Mount","Drain-Source On-Volt":"500 V","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"1.8 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"4 ohm","Number of Elements":"1"}...