Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"45 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"0.4800 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"45 Ohm @ 120mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.3V @ 94\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP125E6327T SP000011100","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP125","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Moun...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"45 Ohm @ 120mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.3V @ 94\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"4,000","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP125E6433T SP000011101","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP125","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Moun...

{"Product Category":"MOSFET","Series":"BSP125","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP125H6327XTSA1","RoHS":"Details","Manufacturer":"Infineon"}...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"45 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"0.4800 A","Channel Type":"N-CHANNEL","Chin...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.3V @ 94\u00b5A","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSP125","Rds On (Max) @ Id, Vgs":"45 Ohm @ 120mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"1.8W","Standard Package":"1,000","Input Capacitance (Ciss) @ Vds":"150pF @ 25V","Drain to Source Voltage (Vdss)":"600V","Current -...

{"Category":"MOSFET","Maximum Drain Source Voltage":"600 V","Typical Rise Time":"14.4 ns","Typical Turn-Off Delay Time":"20 ns","Description":"Value","Maximum Continuous Drain Current":"0.12 A","Package":"4SOT-223","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"7.7 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"45@10V Ohm","Manufacturer":"Infineon Technologies","Typical Fall Time":"110 ns"}...

{"Product Category":"MOSFET","Series":"BSP125","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP125H6433XTMA1","RoHS":"Details","Manufacturer":"Infineon"}...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1200 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"45 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"0.4800 A","Channel Type":"N-CHANNEL","Chin...

{"Factory Pack Quantity":"4000","Vds - Drain-Source Breakdown Voltage":"600 V","Transistor Polarity":"N-Channel","Vgs th - Gate-Source Threshold Voltage":"1.3 V","Qg - Gate Charge":"4.4 nC","Package / Case":"SOT-223-3","Part # Aliases":"SP001058578","Fall Time":"110 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Infineon","Forward Transconductanc...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.3V @ 94\u00b5A","Input Capacitance (Ciss) @ Vds":"150pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP125","Rds On (Max) @ Id, Vgs":"45 Ohm @ 120mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA"...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.12 A","Mounting":"Surface Mount","Drain-Source On-Volt":"600 V","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"1.8 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"45 ohm","Number of Elements":"1"}...