Product Datasheet Search Results:
- BSM75GAR120DN2
- Infineon Technologies Ag
- 75 A, 1200 V, N-CHANNEL IGBT
Product Details Search Results:
Infineon.com/BSM75GAR120DN2
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Channel Type":"N-CHANNEL","Terminal Form":"UNSPECIFIED","Number of Terminals":"7","Collector-emitter Voltage-Max":"1200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"75 A","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN DIODE","Package Style":"FLANGE MOUNT","Number of Elements":"1"}...
1167 Bytes - 03:38:29, 16 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM75GAR120DN2.pdf | 0.08 | 1 | Request |




