Product Datasheet Search Results:

BSM200GA120DLCS.pdf10 Pages, 201 KB, Original
BSM200GA120DLCS.pdf8 Pages, 277 KB, Original
BSM200GA120DLCS
Infineon Technologies Ag
370 A, 1200 V, N-CHANNEL IGBT

Product Details Search Results:

Infineon.com/BSM200GA120DLCS
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"650 ns","Collector Current-Max (IC)":"370 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"190 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","China RoHS Co...
1460 Bytes - 20:55:39, 16 January 2026

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
BSM200GA120DLCS.pdf0.271Request