Product Datasheet Search Results:
10 Pages, 654 KB, Original- BSC109N10NS3G
- Infineon Technologies
- Trans MOSFET N-CH 100V 63A 8-Pin TDSON EP
10 Pages, 654 KB, Original- BSC109N10NS3GATMA1
- Infineon Technologies
- Trans MOSFET N-CH 100V 63A 8-Pin TDSON EP
Product Details Search Results:
Infineon.com/BSC109N10NS3G
{"Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"70 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"63 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0109 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"252 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transi...
1515 Bytes - 08:52:58, 15 January 2026
Infineon.com/BSC109N10NS3GATMA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"7 ns","Typical Turn-Off Delay Time":"19 ns","Description":"Value","Maximum Continuous Drain Current":"63 A","Package":"8TDSON EP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"12 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"10.9@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"5 ns"}...
1504 Bytes - 08:52:58, 15 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSC109N10NS3G.pdf | 0.64 | 1 | Request |
