Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"8-PowerTDFN","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2800pF @ 12V","Series":"OptiMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-TDSON-8","Datasheets":"BSC018NE2LS","Rds On (Max) @ Id, Vgs":"1.8 mOhm @ 30A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"69W","Package / Case":"8-PowerTDFN","Moun...

{"Category":"MOSFET","Maximum Drain Source Voltage":"25 V","Typical Rise Time":"4.4 ns","Typical Turn-Off Delay Time":"26 ns","Description":"Value","Maximum Continuous Drain Current":"29 A","Package":"8TDSON EP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"20 V","Typical Turn-On Delay Time":"5.5 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1.8@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"3.6 ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"25 V","Typical Rise Time":"4.4 ns","Typical Turn-Off Delay Time":"26 ns","Description":"Value","Maximum Continuous Drain Current":"29 A","Package":"8TDSON EP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"20 V","Typical Turn-On Delay Time":"5.5 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1.8@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"3.6 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"8-PowerTDFN","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"2500pF @ 12V","Series":"OptiMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-TDSON-8","Datasheets":"BSC018NE2LSI","Rds On (Max) @ Id, Vgs":"1.8 mOhm @ 30A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Pow...

{"Category":"MOSFET","Maximum Drain Source Voltage":"25 V","Typical Rise Time":"4.8 ns","Typical Turn-Off Delay Time":"24 ns","Description":"Value","Maximum Continuous Drain Current":"29 A","Package":"8TDSON EP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"20 V","Typical Turn-On Delay Time":"5.2 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1.8@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"3.6 ns"}...

{"Factory Pack Quantity":"5000","Vds - Drain-Source Breakdown Voltage":"25 V","Transistor Polarity":"N-Channel","Vgs th - Gate-Source Threshold Voltage":"1.2 V to 2 V","Qg - Gate Charge":"36 nC","Package / Case":"TDSON-8","Part # Aliases":"BSC018NE2LSIATMA1 SP000906030","Fall Time":"3.6 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Tradename":"OptiMOS","Configuration":"Single Quad Drain Triple Source","Maximum Operating Tempe...

{"Category":"MOSFET","Maximum Drain Source Voltage":"25 V","Typical Rise Time":"4.4 ns","Typical Turn-Off Delay Time":"26 ns","Description":"Value","Maximum Continuous Drain Current":"29 A","Package":"8TDSON EP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"20 V","Typical Turn-On Delay Time":"5.5 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"1.8@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"3.6 ns"}...