Product Datasheet Search Results:
1 Pages, 16 KB, Original- BS170P
- Diodes Incorporated
- MOSFET N-CH 60V 270MA TO92-3
1 Pages, 31 KB, Scan- BS170PM1
- Diodes Incorporated
- 270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
1 Pages, 63 KB, Scan- BS170PSM
- Diodes Incorporated
- 270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
1 Pages, 63 KB, Scan- BS170PSMTA
- Diodes Incorporated
- 270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
1 Pages, 63 KB, Scan- BS170PSMTC
- Diodes Incorporated
- 270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
1 Pages, 16 KB, Original- BS170PSTOA
- Diodes Incorporated
- MOSFET N-CH 60V 0.27A TO92-3
1 Pages, 16 KB, Original- BS170PSTOB
- Diodes Incorporated
- MOSFET N-CH 60V 0.27A TO92-3
1 Pages, 63 KB, Scan- BS170PSTZ
- Diodes Incorporated
- 270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
1 Pages, 16 KB, Original- BS170P
- Diodes Inc
- Trans MOSFET N-CH 60V 0.27A 3-Pin E-Line
1 Pages, 32 KB, Scan- BS170P
- Zetex Semiconductors
- Quick Reference Guide (Discrete Semiconductors) 1991
Product Details Search Results:
Diodes.com/BS170P
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 1mA","Other Drawings":"TO-92 Pin Out TO-92 Front TO-92 Side","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Current - Continuous Drain (Id) @ 25\u00b0C":"270mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","Datasheets":"BS170P","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"4,000","Drain to ...
1843 Bytes - 03:35:55, 10 January 2026
Diodes.com/BS170PM1
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.6250 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2700 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor A...
1431 Bytes - 03:35:55, 10 January 2026
Diodes.com/BS170PSM
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2700 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Applic...
1442 Bytes - 03:35:55, 10 January 2026
Diodes.com/BS170PSMTA
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2700 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Applic...
1453 Bytes - 03:35:55, 10 January 2026
Diodes.com/BS170PSMTC
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2700 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Applic...
1455 Bytes - 03:35:55, 10 January 2026
Diodes.com/BS170PSTOA
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 1mA","Series":"-","Standard Package":"2,000","Supplier Device Package":"E-Line (TO-92 compatible)","Datasheets":"BS170P","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"625mW","Package / Case":"E-Line-3","Mounting Type":"Through Hole...
1599 Bytes - 03:35:55, 10 January 2026
Diodes.com/BS170PSTOB
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 1mA","Series":"-","Standard Package":"2,000","Supplier Device Package":"E-Line (TO-92 compatible)","Datasheets":"BS170P","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"625mW","Package / Case":"E-Line-3","Mounting Type":"Through Hole...
1599 Bytes - 03:35:55, 10 January 2026
Diodes.com/BS170PSTZ
{"Terminal Finish":"MATTE TIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2700 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCT...
1475 Bytes - 03:35:55, 10 January 2026
Diodes_inc/BS170P
725 Bytes - 03:35:55, 10 January 2026
Documentation and Support
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