Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"21(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"150(V)","Packaging":"Rail/Tube","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"D2PAK","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF3315S","Rds On (Max) @ Id, Vgs":"82 mOhm @ 12A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Ma...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"D2PAK","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF3315S","Rds On (Max) @ Id, Vgs":"82 mOhm @ 12A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)"...

{"Factory Pack Quantity":"800","Vds - Drain-Source Breakdown Voltage":"150 V","Transistor Polarity":"N-Channel","Rds On - Drain-Source Resistance":"82 mOhms","Brand":"International Rectifier","Id - Continuous Drain Current":"21 A","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"3.8 W","Packaging":"Reel","Product Category":"MOSFET","Qg - Gate Charge":"95 nC","Package / Case":"D-PAK-3","Maximum Operating Temperature":"+ 175 C","RoHS":"Details","Manufacturer":"International Rectifier"}...