Product Datasheet Search Results:
10 Pages, 176 KB, Original- APM2506NUB
- Anpec Electronics Corporation
- N-Channel Enhancement Mode MOSFET
10 Pages, 176 KB, Original- APM2506NUBC-PB
- Anpec Electronics Corp.
- 12 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
10 Pages, 176 KB, Original- APM2506NUBC-PBL
- Anpec Electronics Corp.
- 12 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
Product Details Search Results:
Anpec.com.tw/APM2506NUBC-PB
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0060 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"150 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...
1499 Bytes - 00:12:59, 03 January 2026
Anpec.com.tw/APM2506NUBC-PBL
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0060 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"150 A","Channel Type":"N-CHANNEL","FET...
1563 Bytes - 00:12:59, 03 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| APM25.pdf | 0.03 | 1 | Request |
