Product Datasheet Search Results:
4 Pages, 251 KB, Original- 2SK3516-01S
- Fuji Electric Corp. Of America
- 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 251 KB, Original- 2SK3516-01SJ
- Fuji Electric Corp. Of America
- 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fujielectric.co.jp/2SK3516-01S
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"155 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1549 Bytes - 16:00:06, 17 January 2026
Fujielectric.co.jp/2SK3516-01SJ
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"155 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCT...
1521 Bytes - 16:00:06, 17 January 2026
