Product Datasheet Search Results:
4 Pages, 71 KB, Original- 2SK2766-01R
- Fuji Electric Corp. Of America
- 7 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fujielectric.co.jp/2SK2766-01R
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"145 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"28 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"800 V","Tran...
1487 Bytes - 17:42:52, 17 January 2026
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2766-01R.pdf | 0.07 | 1 | Request |
