Product Datasheet Search Results:
- 2SK2408-E
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET
- 2SK2408-E
- Renesas Electronics
- 7 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Renesas.com/2SK2408-E
{"Terminal Finish":"TIN COPPER","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.9000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"28 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1495 Bytes - 14:45:00, 16 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 1408-EM2A-485.pdf | 1.76 | 1 | Request | |
| 1408-EM3A-ENT.pdf | 1.76 | 1 | Request | |
| 1408-EM1A-ENT.pdf | 1.76 | 1 | Request | |
| 1408-EM2A-ENT.pdf | 1.76 | 1 | Request | |
| 1408-EM1A-485.pdf | 1.76 | 1 | Request | |
| 1408-EM3A-485.pdf | 1.76 | 1 | Request |





