Datasheet.Directory

{"g(fs) Max, (S) Trans. conduct,":"35m","Noise Figure Max. (dB)":"3.5","P(D) Max.(W) Power Dissipation":"300m","V(BR)GSS (V)":"-8","@V(DS) (V) (Test Condition)":"3","@V(DD) (V) (Test Condition)":"3","@Temp (°C) (Test Condition)":"25","@I(D) (A) (Test Condition)":"10m","@Freq. (Hz) (Test Condition)":"12G","Package":"Micro-X","I(DSS) Min. (A)":"30m","V(GS)off Max. (V)":"-2.5","Power Gain Min. (dB)":"11","Semiconductor Material":"GaAs","I(DSS) Max. (A)":"100m","V(BR)DSS (V)":"5.0","g(fs) Min. (S) Trans. c...

{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"4.8p","V(GS)off Max. (V)":"4.5","Absolute Max. Power Diss. (W)":"250m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"12m","g(fs) Min. (S) Trans. conduct.":"1.0m","I(D) Abs. Drain Current (A)":"20m","Package":"TO-18","Military":"N","g(fs) Max, (S) Trans. conduct,":"2.0m"}...

{"@V(DS) (V) (Test Condition)":"10","C(iss) Max. (F)":"4.8p","V(GS)off Max. (V)":"4.5","Absolute Max. Power Diss. (W)":"250m","I(GSS) Max. (A)":"5.0p","I(DSS) Min. (A)":"12m","g(fs) Min. (S) Trans. conduct.":"1.0m","I(D) Abs. Drain Current (A)":"20m","Package":"TO-18","Military":"N","g(fs) Max, (S) Trans. conduct,":"2.0m"}...

{"C(iss) Max. (F)":"7.5p","Absolute Max. Power Diss. (W)":"350m","I(GSS) Max. (A)":"50n","I(DSS) Min. (A)":"32m","I(D) Abs. Drain Current (A)":"35m","Package":"TO-206AA","Military":"N","V(GS)off Max. (V)":"2"}...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"0.4000 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","D...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"0.4000 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTAN...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"0.4000 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTAN...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"0.4000 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTAN...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"0.4000 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTAN...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"0.4000 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"DEPLETION","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTAN...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"70 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"0.4000 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"900 V...

{"C(iss) Max. (F)":"400p","Absolute Max. Power Diss. (W)":"20","@Pulse Width (s) (Condition)":"10u","g(fs) Max, (S) Trans. conduct,":"4.0","@V(GS) (V) (Test Condition)":"4.0","t(d)off Max. (s) Off time":"90n","r(DS)on Max. (Ohms)":"170m","@V(DS) (V) (Test Condition)":"10","I(DM) Max (A)(@25°C)":"16","I(GSS) Max. (A)":"10u","g(fs) Min. (S) Trans. conduct.":"2.5","V(BR)GSS (V)":"15","@I(D) (A) (Test Condition)":"2.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.0","@(VDS) (V) (Test Conditi...