Product Datasheet Search Results:

2SC5509-FB.pdf12 Pages, 210 KB, Original
2SC5509-FB
Renesas Electronics
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5509-FB(T2-A).pdf10 Pages, 226 KB, Original
2SC5509-FB(T2-A)
Renesas Technology
Trans RF BJT NPN 3.3V 0.1A 190mW 4-Pin Thin-Type Super Mini-Mold T/R

Product Details Search Results:

Renesas.com/2SC5509-FB
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"NPN","Terminal Form":"FLAT","Power Dissipation Ambient-Max":"0.1900 W","Collector Current-Max (IC)":"0.1000 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"3.3 V","Terminal Position":"DUAL","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Collector-base Capacitance-Max":...
1440 Bytes - 09:27:31, 13 January 2026
Renesas.com/2SC5509-FB(T2-A)
1109 Bytes - 09:27:31, 13 January 2026

Documentation and Support

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