Product Datasheet Search Results:
4 Pages, 123 KB, Original- 2SC5199
- Toshiba America Electronic Components, Inc.
- 12 A, 160 V, NPN, Si, POWER TRANSISTOR
3 Pages, 170 KB, Scan- 2SC5199-O
- Toshiba America Electronic Components, Inc.
- 12 A, 160 V, NPN, Si, POWER TRANSISTOR
4 Pages, 123 KB, Original- 2SC5199-O(Q)
- Toshiba
- Trans GP BJT NPN 160V 12A 120000mW 3-Pin(3+Tab) TO-3PL
3 Pages, 170 KB, Scan- 2SC5199-R
- Toshiba America Electronic Components, Inc.
- 12 A, 160 V, NPN, Si, POWER TRANSISTOR
4 Pages, 123 KB, Original- 2SC5199-R(Q)
- Toshiba
- Trans GP BJT NPN 160V 12A 3-Pin(3+Tab) TO-3PL
Product Details Search Results:
N_a/2SC5199
{"Category":"NPN Transistor, Transistor","Amps":"12A","MHz":"30 MHz","Volts":"180V"}...
517 Bytes - 09:47:45, 13 January 2026
Toshiba.co.jp/2SC5199
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-21F1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"35","Collector-emitter Voltage-Max":"160 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"12 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN",...
1378 Bytes - 09:47:45, 13 January 2026
Toshiba.co.jp/2SC5199-O
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-21F1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"80","Collector-emitter Voltage-Max":"160 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"12 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN",...
1391 Bytes - 09:47:45, 13 January 2026
Toshiba.co.jp/2SC5199O
{"V(CE)sat Max.(V)":"2.5","Absolute Max. Power Diss. (W)":"120","V(BR)CBO (V)":"180","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"80","I(C) Abs.(A) Collector Current":"12","h(FE) Max. Current gain.":"160","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"5.0u","@V(CBO) (V) (Test Condition)":"180","Package":"TO-264AA","f(T) Min. (Hz) Transition Freq":"30M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"800m","V(BR)CEO (V)":"180","Military":"N","@I(C) (A) (Tes...
1015 Bytes - 09:47:45, 13 January 2026
Toshiba.co.jp/2SC5199-O(Q)
{"Collector Current (DC) ":"12(A)","Transistor Polarity":"NPN","Collector-Emitter Voltage":"160(V)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Category ":"Bipolar Power","Power Dissipation":"120(W)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Frequency":"30(MHz)","Package Type":"TO-3PL","Collector-Base Voltage":"160(V)","DC Current Gain":"80","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3 +Tab","Number o...
1558 Bytes - 09:47:45, 13 January 2026
Toshiba.co.jp/2SC5199-R
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-21F1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"55","Collector-emitter Voltage-Max":"160 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"12 A","Case Connection":"COLLECTOR","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN",...
1389 Bytes - 09:47:45, 13 January 2026
Toshiba.co.jp/2SC5199R
{"V(CE)sat Max.(V)":"2.5","Absolute Max. Power Diss. (W)":"120","V(BR)CBO (V)":"180","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"55","I(C) Abs.(A) Collector Current":"12","h(FE) Max. Current gain.":"110","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"5.0u","@V(CBO) (V) (Test Condition)":"180","Package":"TO-264AA","f(T) Min. (Hz) Transition Freq":"30M","@V(CE) (V) (Test Condition)":"5.0","@I(B) (A) (Test Condition)":"800m","V(BR)CEO (V)":"180","Military":"N","@I(C) (A) (Tes...
1015 Bytes - 09:47:45, 13 January 2026
Toshiba.co.jp/2SC5199-R(Q)
1017 Bytes - 09:47:45, 13 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SC5199.pdf | 0.12 | 1 | Request |
