Product Details Search Results:
N_a/2SB1481
{"Category":"Transistor, Darlington Transistor","Amps":"4A","MHz":"<1 MHz","Volts":"100V"}...
548 Bytes - 19:59:06, 13 January 2026
Toshiba.co.jp/2SB1481(Q)
{"Polarity":"PNP","Collector Current (DC) ":"4 A","Collector-Emitter Saturation Voltage":"1.5 V","Base-Emitter Saturation Voltage (Max)":"2 V","Collector-Emitter Voltage":"100 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Rad Hardened":"No","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-220NIS","Collector-Base Voltage":"100 V","Pin Count":"3 +Tab","Number of Elements":"1"}...
1479 Bytes - 19:59:06, 13 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SB1481.pdf | 0.14 | 1 | Request |
