Product Datasheet Search Results:
5 Pages, 96 KB, Scan- 2N3966
- Thomson-csf
- Signal Transistors and Field Effect Transistors 1976
1 Pages, 36 KB, Scan- 2N3966
- Micro Electronics
- Semiconductor Device Data Book
1 Pages, 39 KB, Scan- 2N3966
- National Semiconductor
- Pro-Electron Transistor Datasheets
4 Pages, 293 KB, Original- 2N3966
- Semiconductors, Inc.
- N-Channel Junction Field Effect Transistors
4 Pages, 63 KB, Original- 2N3966
- Philips Semiconductors / Nxp Semiconductors
- N-Channel Junction Field Effect Transistors
1 Pages, 63 KB, Scan- 2N3966
- Solitron Devices, Inc.
- N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-72
1 Pages, 26 KB, Scan- 2N3966
- Thomson Semiconductors
- Telecom Integrated Circuits Data Book 1985
Product Details Search Results:
Solitrondevices.com/2N3966
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain-source On Resistance-Max":"220 ohm","Feedback Cap-Max (Crss)":"1.5 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number ...
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Various/2N3966
{"@V(DS) (V) (Test Condition)":"20","C(iss) Max. (F)":"6.0p","Absolute Max. Power Diss. (W)":"300m","I(GSS) Max. (A)":"100p","I(DSS) Min. (A)":"2.0m","V(BR)DSS (V)":"30","V(BR)GSS (V)":"30","g(fs) Min. (S) Trans. conduct.":"2.0m","Package":"TO-72","Military":"N","V(GS)off Max. (V)":"6.0","r(DS)on Max. (Ohms)":"220"}...
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