Product Datasheet Search Results:
- 2N3500JANS
- New England Semiconductor
- NPN SILICON TRANSISTOR
Product Details Search Results:
Microsemi.com/2N3500JANTX
{"Collector Current (DC) ":"0.3 A","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"0.3 A","Collector-Emitter Voltage":"150 V","Mounting":"Through Hole","Emitter-Base Voltage":"6 V","Category ":"Bipolar Power","DC Current Gain (Min)":"40","Operating Temperature Classification":"Military","Power Dissipation":"1 W","Operating Temp Range":"-55C to 200C","Package Type":"TO-39","Collector-Base Voltage":"150 V","Rad Hardened":"No","DC Current Gain":"20","Pin Count":"3","Number of Elements":"1"}...
1520 Bytes - 10:12:06, 13 January 2026
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| E2N3500W.pdf | 0.04 | 1 | Request |




