Product Datasheet Search Results:

2N1132JANTX.pdf2 Pages, 57 KB, Original
2N1132JANTX
New England Semiconductor
LOW POWER PNP SILICON TRANSISTOR

Product Details Search Results:

Microsemi.com/2N1132JANTX
{"Collector Current (DC) ":"0.6 A","Transistor Polarity":"PNP","Collector-Emitter Voltage":"40 V","Rad Hardened":"No","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"0.6 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-39","Collector-Base Voltage":"50 V","DC Current Gain":"30","Pin Count":"3","Number of Elements":"1"}...
1445 Bytes - 19:53:15, 08 January 2026

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
VV3QZ35-02N11TC-D.pdf4.091Request
KQ2N11-99.pdf38.991Request
VV5QZ35-02N11TC-D0.pdf8.561Request
VV3QZ35-02N11TC.pdf4.091Request
VV5QZ35-02N11TC.pdf8.561Request
KQ2N11-13.pdf38.991Request
06A1001A1402N114.pdf0.031Request
06A1001R2202N115.pdf0.031Request
06A1001R2212N115.pdf0.031Request
06A1001R1602N114.pdf0.031Request
T12N11S10.pdf0.041Request
06A1001R2412N115.pdf0.031Request