TJ150F06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ150F06M3L 1. Applications * Automotive * Relay Drivers * Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.3 m (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 A (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit V Drain-source voltage VDSS -60 Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -150 Drain current (pulsed) (Note 1) IDP -450 PD 300 W (Note 2) EAS 430 mJ IAR -150 A Channel temperature (Note 3) Tch 175 Storage temperature (Note 3) Tstg -55 to 175 Power dissipation (Tc = 25) Single-pulse avalanche energy Avalanche current Note: A Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and th
TJ150F06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ150F06M3L 1. Applications * Relay Drivers * Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.3 m (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 A (max) (VDS = -60 V) (3) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 25 Characteristics Symbol Rating Unit V Drain-source voltage VDSS -60 Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -150 Drain current (pulsed) (Note 1) IDP -450 PD 300 W (Note 2) EAS 430 mJ IAR -150 A Channel temperature (Note 3) Tch 175 Storage temperature (Note 3) Tstg -55 to 175 Power dissipation (Tc = 25) Single-pulse avalanche energy Avalanche current Note: A Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperatu
TJ150F06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ150F06M3L 1. Applications * Automotive * Relay Drivers * Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.3 m (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 A (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) Start of commercial production (c)2016 Toshiba Corporation 1 2010-02 2016-07-07 Rev.5.0 TJ150F06M3L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit V Drain-source voltage VDSS -60 Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -150 Drain current (pulsed) (Note 1) IDP -450 PD 300 W (Note 2) EAS 430 mJ IAR -150 A Channel temperature (Note 3) Tch 175 Storage temperature (Note 3) Tstg -55 to 175 Power dissipation (Tc = 25) Single-pulse avalanche energy Avalanche curr
F04K3L (0.003) TJ100F04M3L (0.0036) 100 60 70 TK80X04K3(0.0035) 80 2SK1382 (0.020) TK60A08J1 (0.0078) TK60E08K (0.009) 2SK2267 (0.011) 2SK2313 (0.011) N TK60P03M1 (0.0064) 70 80 TK100F06K3 (0.005) 100 120 130 120 130 TJ120F06J3 (0.008) TK130F06K3 (0.0034) TJ150F06M3L (0.0056) TK150F04K3 (0.0021) TK150F04K3L (0.0021) TJ150F04M3L (0.0028) 150 450 TPCC8005-H (0.0064) 34 60 300 N NS TPCA8A02-H (0.0053) N TPCA8039-H (0.0057) P TPCA8128 (0.0048) 56 250 2SK3444 (0.082) 2SK3625 (0.082) TK25A10K3 (0.040) TK25E06K3 (0.018) 32 50 200 24 N TPCA8059-H (0.0038) N TPCA8047-H (0.0073) N TPCA8082 (0.0039) 48 150 N TPCA8050-H (0.0142) 30 45 100 TPCC8007 (0.0046) N TPCC8073 (0.0045) 33V N TPCC8076 (0.0047) N TPCC8062-H (0.0056) 28 40 80 TPCC8008 (0.0068) 26 N 75 N 25 27 30 Product series : L2--MOSV : -MOSIV : -MOSIII : -MOSV : -MOSVI : L2--MOSVI : U-MOS : -MOSVII : DTMOSII : DTMOSI 150 Package PW-Mini TO-220SM(W) USV UFV 14 VS-8 TO-3P(N) ESV VS-6 TO-3P(N)IS DPAK PS-8 TO-3P(L) SOT-23F TO-92MOD Chip LGA New PW-Mold S
G10N1 (0.0032) 100 130 TK130F06K3 (0.0034) TK150F04K3 (0.0021) TK150F04K3L (0.0021) TJ150F04M3L (0.0028) 150 Legend TK80A08K3 (0.0045) TK80F08K3 (0.0043) Product series : L2--MOSV : -MOSIV : -MOSIII : -MOSV : -MOSVI : L2--MOSVI : U-MOS : -MOSVII : DTMOSII TJ150F06M3L (0.0056) 150 Package PW-Mini TO-220SM(W) USV UFV 14 VS-8 TO-3P(N) ESV VS-6 TO-3P(N)IS DPAK PS-8 TO-3P(L) SOT-23F TO-92MOD Chip LGA UDFN6 New PW-Mold S-Mini DPAK+ TSON Advance TSM USM New PW-Mold2 UFM SSM SOP-8 VESM SOP Advance CST3 CST3B TO-220NIS CST4 TO-220SIS SMV US6 TO-220 UF6 ES6 TFP CST6D Notes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive = 1.8-V drive = High-speed diode N = N-ch TO-220SM 15 P = P-ch CN = Complementary N-ch CP = Complementary P-ch NS = N-ch + SBD PD = P-ch + Driver PS = P-ch + SBD (load switch) [ ] = Under development 4 Low-VDSS MOSFETs (in Small SMD Packages) 4-1 Packaging Options SSM Series The SSM Series comes in small, thin packages suitable for portable devices. Chip-scale packages (1006 size) help re
G10N1 (0.0032) 100 130 TK130F06K3 (0.0034) TK150F04K3 (0.0021) TK150F04K3L (0.0021) TJ150F04M3L (0.0028) 150 Legend TK80A08K3 (0.0045) TK80F08K3 (0.0043) Product series : L2--MOSV : -MOSIV : -MOSIII : -MOSV : -MOSVI : L2--MOSVI : U-MOS : -MOSVII : DTMOSII TJ150F06M3L (0.0056) 150 Package PW-Mini TO-220SM(W) USV UFV 14 VS-8 TO-3P(N) ESV VS-6 TO-3P(N)IS DPAK PS-8 TO-3P(L) SOT-23F TO-92MOD Chip LGA UDFN6 New PW-Mold S-Mini DPAK+ TSON Advance TSM USM New PW-Mold2 UFM SSM SOP-8 VESM SOP Advance CST3 CST3B TO-220NIS CST4 TO-220SIS SMV US6 TO-220 UF6 ES6 TFP CST6D Notes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive = 1.8-V drive = High-speed diode N = N-ch TO-220SM 15 P = P-ch CN = Complementary N-ch CP = Complementary P-ch NS = N-ch + SBD PD = P-ch + Driver PS = P-ch + SBD (load switch) [ ] = Under development 4 Low-VDSS MOSFETs (in Small SMD Packages) 4-1 Packaging Options SSM Series The SSM Series comes in small, thin packages suitable for portable devices. Chip-scale packages (1006 size) help re
G10N1 (0.0032) 100 130 TK130F06K3 (0.0034) TK150F04K3 (0.0021) TK150F04K3L (0.0021) TJ150F04M3L (0.0028) 150 Legend TK80A08K3 (0.0045) TK80F08K3 (0.0043) Product series : L2--MOSV : -MOSIV : -MOSIII : -MOSV : -MOSVI : L2--MOSVI : U-MOS : -MOSVII : DTMOSII TJ150F06M3L (0.0056) 150 Package PW-Mini TO-220SM(W) USV UFV 14 VS-8 TO-3P(N) ESV VS-6 TO-3P(N)IS DPAK PS-8 TO-3P(L) SOT-23F TO-92MOD Chip LGA UDFN6 New PW-Mold S-Mini DPAK+ TSON Advance TSM USM New PW-Mold2 UFM SSM SOP-8 VESM SOP Advance CST3 CST3B TO-220NIS CST4 TO-220SIS SMV US6 TO-220 UF6 ES6 TFP CST6D Notes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive = 1.8-V drive = High-speed diode N = N-ch TO-220SM 15 P = P-ch CN = Complementary N-ch CP = Complementary P-ch NS = N-ch + SBD PD = P-ch + Driver PS = P-ch + SBD (load switch) [ ] = Under development 4 Low-VDSS MOSFETs (in Small SMD Packages) 4-1 Packaging Options SSM Series The SSM Series comes in small, thin packages suitable for portable devices. Chip-scale packages (1006 size) help re
7 6.6 3.0 2.0 6.1 10.0 6.0 6.0 (mm) 9500 1000 1550 250 U-MOSVI (3b) 200 375 1.8 2.6 12800 1150 2400 460 U-MOSVI (3a) +10/ 100 250 20 7.1 10.7 9000 700 1100 250 U-MOSVI 5.6 6.1 12500 880 1750 420 U-MOSVI 170 2900 120 U-MOSVI 20 TJ100F06M3L 60 3.6 +10/ (mm) TJ150F06M3L 20 150 300 10.3 2.0 5.4 3.0 13.0 10.0 3.6 +10/ TJ200F04M3L 10.0 100 250 20 40 9.0 +10/ TJ100F04M3L TO-220SM(W) 1.6 2.3 2.3 (3b) 2.0 4.0 2.54 2.34 TO-220SIS 10.0 TJ9A10M3 15.0 20 9 19 150 47 13.0 2.0 100 (3a_I) TJ11A10M3 20 11 24 130 3200 135 190 69 U-MOSVI (mm) Internal Connections (3a) Drain (Heatsink) (3a_I) Drain 2 Gate (3b) 2 Gate 1 Source 3 2 Source 3 Gate 1 1 Pch Drain (Heatsink) Source 3 Pch Pch The internal connection diagrams only show the general configurations of the circuits. 15 |VGS| = 6 V |VGS| = 4.5 V |VGS| = 2.5 V |VGS| = 1.8 V 4 1.35 58 83 265 TPCF8306 +20/ 30 3.2 1.35 25 Qg typ. (nC) |VGS| = 10 V 20 12 Coss typ. (pF) PD (W) TPCF8305 Part Number Crss typ. (pF) ID (A) Polarity VDSS (V) Package RDS(ON) max (m) VGSS (V)
h MOSFET) () VDSS (V) ID (A) PD (W) VGS= -1.8 V VGS= -2.0 V VGS= -2.5 V RDS(ON) Max (m) VGS= VGS= -4 V -4.5 V VGS= -6 V VGS= -7 V VGS= -10 V Qg (nC) () TJ100F04M3L -40 -100 250 5.4 3.6 250 TJ150F04M3L -40 -150 300 4.2 2.8 390 TJ120F06J3 -60 -120 300 8 258 TJ150F06M3L -60 -150 300 6.1 5.6 420 2SJ200 -180 -10 120 830 2SJ618 -180 -10 130 370 35 Pch Single 2SJ440 -180 -9 80 830 Pch Single 2SJ201 -200 -12 150 625 Pch Single (mm) TO-3P(N) Pch Single (mm) TO-3P(N)IS (mm) TO-3P(L) (mm) * RoHS 42 2011/1 SCJ0004R VDSS60 V (MOSFET) (Nch ,Pch ) SSM6L39TU SSM6L13TU SSM6L10TU UF6 2.1 SSM6L11TU Nch + Pch 2.0 0.7 SSM6L12TU SSM6L40TU (mm) SSM6E03TU SSM6E02TU SSM6E01TU VDSS (V) VGSS (V) ID (A) RDS(ON) Max (m) |VGS| = |VGS| = 1.5 V 1.8 V |VGS| = 2.5 V |VGS| = 4.0 V Ciss Qg (nC) |VGS| = |VGS| = (pF) () FET 4.5 V 10 V 20 10 1.6 247 190 139 119 265 -20 8 -1.5 430 294 213 250 20 12 0.8 235 178 143 268 -20 8 -0.8 460 306 234 250 20 12 0.5 395 190 145 268 -20 8 -0.5 980 330 230 250 20 12 0.5 395 190 145 268 -20 12 -0.5 4
1.8 V VGS 2.0 V VGS 2.5 V RDS(ON) Max (m) VGS VGS 4 V 4.5 V VGS 6 V VGS 7 V VGS 10 V Qg Internal (nC) Connections (typ.) TJ100F04M3L 40 100 250 5.4 3.6 250 TJ150F04M3L 40 150 300 4.2 2.8 390 TJ100F06M3L 60 100 250 10.7 7.1 250 TJ120F06J3 60 120 300 8 258 TJ150F06M3L 60 150 300 6.1 5.6 420 2SJ200 180 10 120 830 2SJ618 180 10 130 370 35 Pch Single 2SJ440 180 9 80 830 Pch Single 2SJ201 200 12 150 625 TO-220SM(W) Pch Single (mm) TO-3P(N) Pch Single (mm) TO-3P(N)IS (mm) TO-3P(L) (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 41 2011/9 SCE0004L |VDSS| 60 V (Power MOSFETs) Package Polarity (Complementary MOSFETs) VDSS VGSS (V) (V) Part Number SSM6L39TU SSM6L12TU UF6 2.1 SSM6L40TU N-ch P-ch 2.0 SSM6E03TU 0.7 (mm) SSM6E02TU SSM6E01TU RDS(ON) Max (m) ID (A) |VGS| 1.5 V |VGS| 1.8 V |VGS| 2.5 V |VGS| 4.0 V |VGS| 4.5 V |VGS| 10 V Ciss (pF) 20 10 1.6 247 190 139 119 265 20 8 1.5 430 294 213 250 245 30 12 0.5 180 145 20 12 0.5 430 260 Qg
(A)180 TK70X04K3 TK70X04K3Z TK75J04K3Z TK70J04K3Z TK80X04K3 TK80X04K3L TK100F04K3 TK100F04K3L TK150F04K3 TK150F04K3L TK70X06K3 TK100F06K3 TK130F06K3 TK40F08K3 TK80F08K3 TK40X10J1 TK50X15J1 TK50F15J1 TJ80X04M3L TJ100F04M3L TJ150F04M3L TJ80X06M3L TJ120F06J3 TJ150F06M3L VDSS (V) ID (A) 40 70 40 70 40 RDS (ON) max (m) Note VGS = 6V VGS = 10V TFP - 5.8 Tch = 175C TFP - 5.8 Tch = 175C 75 TO-3P(N) - 3.0 Tch = 175C 40 70 TO-3P(N) - 3.9 Tch = 175C 40 80 TFP - 3.5 Tch = 175C 40 80 TFP 5.3 3.5 Tch = 175C 40 100 TO-220SM(W) - 3.0 Tch = 175C 40 100 TO-220SM(W) 4.5 3.0 Tch = 175C 40 150 TO-220SM(W) - 2.1 Tch = 175C 40 150 TO-220SM(W) 3.2 2.1 Tch = 175C 60 70 TFP - 8.0 Tch = 175C 60 100 TO-220SM(W) - 5.0 Tch = 175C 60 130 TO-220SM(W) - 3.4 Tch = 175C 75 40 TO-220SM(W) - 9.0 Tch = 175C 75 80 TO-220SM(W) - 4.3 Tch = 175C 100 40 TFP - 20 Tch = 175C 150 50 TFP - 30 Tch = 175C 150 50 TO-220SM(W) - 30 Tch = 175C -40 -80 TFP 5.9 3.9 Tch = 175C -40 -100 TO-220SM(W) 5.4 3.6 Tch = 175C -40 -150 TO-220SM(W) 4.2 2.8 Tch =
1.8 V VGS 2.0 V VGS 2.5 V RDS(ON) Max (m) VGS VGS 4 V 4.5 V VGS 6 V VGS 7 V VGS 10 V Qg Internal (nC) Connections (typ.) TJ100F04M3L 40 100 250 5.4 3.6 250 TJ150F04M3L 40 150 300 4.2 2.8 390 TJ100F06M3L 60 100 250 10.7 7.1 250 TJ120F06J3 60 120 300 8 258 TJ150F06M3L 60 150 300 6.1 5.6 420 2SJ200 180 10 120 830 2SJ618 180 10 130 370 35 Pch Single 2SJ440 180 9 80 830 Pch Single 2SJ201 200 12 150 625 TO-220SM(W) Pch Single (mm) TO-3P(N) Pch Single (mm) TO-3P(N)IS (mm) TO-3P(L) (mm) Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 41 2011/9 SCE0004L |VDSS| 60 V (Power MOSFETs) Package Polarity (Complementary MOSFETs) VDSS VGSS (V) (V) Part Number SSM6L39TU SSM6L12TU UF6 2.1 SSM6L40TU N-ch P-ch 2.0 SSM6E03TU 0.7 (mm) SSM6E02TU SSM6E01TU RDS(ON) Max (m) ID (A) |VGS| 1.5 V |VGS| 1.8 V |VGS| 2.5 V |VGS| 4.0 V |VGS| 4.5 V |VGS| 10 V Ciss (pF) 20 10 1.6 247 190 139 119 265 20 8 1.5 430 294 213 250 245 30 12 0.5 180 145 20 12 0.5 430 260 Qg
Part Number VDSS (V) ID (A) PD (W) VGS = 1.8 V VGS = 2.0 V RDS(ON) Max (m) VGS VGS VGS = 2.5 V = 4 V = 4.5 V VGS =6 V VGS =7V VGS = 10 V Qg (nC) (typ.) TJ100F04M3L -40 -100 250 5.4 3.6 250 TJ150F04M3L -40 -150 300 4.2 2.8 390 TJ120F06J3 -60 -120 300 8 258 TJ150F06M3L -60 -150 300 6.1 5.6 420 2SJ200 -180 -10 120 830 2SJ618 -180 -10 130 370 35 P-ch Single 2SJ440 -180 -9 80 830 P-ch Single 2SJ201 -200 -12 150 625 TO-220SM(W) Internal Connections P-ch Single (mm) TO-3P(N) P-ch Single (mm) TO-3P(N)IS (mm) TO-3P(L) (mm) * Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. 43 2010/9SCE0004K VDSS 60 V (Power MOSFETs) Package Polarity (Complementary MOSFETs) Part Number SSM6L39TU 2.1 VGS VGS VGS = 4.0 V = 4.5 V = 10 V Ciss (pF) 20 10 1.6 247 190 139 119 265 -20 8 -1.5 430 294 213 250 0.8 235 178 143 268 8 -0.8 460 306 234 250 20 12 0.5 395 190 145 268 -20 8 -0.5 980 330 230 250 20 12 0.5 395 190 145 268 -20 12 -0.5 430 260 218 30 12 0.5 180 1